2SC3076 2002-07-23 1 toshiba transistor silicon npn epitaxial type (pct process) 2SC3076 power amplifier applications power switching applications low collector saturation voltage: v ce (sat) = 0.5 v (max) (i c = 1 a) excellent switching time: t stg = 1.0 s (typ.) complementary to 2sa1241 maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 2 a base current i b 1 a ta = 25c 1.0 collector power dissipation tc = 25c p c 10 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c unit: mm jedec D jeita D toshiba 2-7b1a weight: 0.36 g (typ.) jedec D jeita D toshiba 2-7j1a weight: 0.36 g (typ.)
2SC3076 2002-07-23 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 50 v, i e = 0 D D 1.0 a emitter cut-off current i ebo v eb = 5 v, i c = 0 D D 1.0 a collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 50 D D v h fe (1) (note) v ce = 2 v, i c = 0.5 a 70 D 240 dc current gain h fe (2) v ce = 2 v, i b = 1.5 a 40 D D collector-emitter saturation voltage v ce (sat) i c = 1 a, i b = 0.05 a D D 0.5 v base-emitter saturation voltage v be (sat) i c = 1 a, i b = 0.05 a D D 1.2 v transition frequency f t v ce = 2 v, i c = 0.5 a D 80 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 30 D pf turn-on time t on D 0.1 D storage time t stg D 1.0 D switching time fall time t f i b1 = ? i b2 = 0.05 a, duty cycle 1% D 0.1 D s note: h fe (1) classification o: 70 to 140, y: 120 to 240 marking explanation of lot no. month of manufacture: january to december are denoted by letters a to l respectively. year of manufacture: last decimal digit of the year of manufacture 20 s input i b1 i b2 output v cc = 30 v i b1 30 ? i b2 0 c3076 product no. lot no. h fe classification
2SC3076 2002-07-23 3 collector current i c (a) v ce ? i c collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) v ce ? i c collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) v ce ? i c dc current gain h fe collector current i c (a) h fe ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) collector current i c (a) base-emitter saturation voltage v be (sat) (v) 1.2 0 0 common emitter tc = 25c 1.0 0.8 0.6 0.4 0.2 0.4 0.8 1.2 1.6 2.0 2.4 2.8 i b = 5 ma 40 30 10 20 1.2 0 1.0 0.8 0.6 0.4 0.2 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 common emitter tc = ? 55c 40 30 10 20 i b = 5 ma 50 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 1.2 0 common emitter tc = 100c 1.0 0.8 0.6 0.4 0.2 40 30 10 20 i b = 5 ma common emitter v ce = 2 v ? 55 25 tc = 100c 1000 10 300 500 100 50 30 0.01 0.03 0.05 0.1 0.3 0.5 1 2 v ce (sat) ? i c v be (sat) ? i c common emitter i c /i b = 20 ? 55 25 tc = 100c 1 0.01 0.3 0.5 0.1 0.05 0.03 0.01 0.03 0.05 0.1 0.3 0.5 1 2 common emitter i c /i b = 20 100 25 tc = ? 55c 10 0.1 3 5 1 0.5 0.3 0.01 0.03 0.05 0.1 0.3 0.5 1 2
2SC3076 2002-07-23 4 i c ? v be p c ? ta base-emitter voltage v be (v) collector current i c (a) ambient temperature ta (c) collector power dissipation p c (w) collector-emitter voltage v ce (v) safe operating area collector current i c (a) 12 0 0 ( 1 ) tc = ta i n fi ni te h e a t s i n k (2) ceramic substrate 50 50 0.8 mm (3) no heat sink 25 50 75 100 125 150 175 2 4 6 8 10 (1) (2) (3) 0 0 common emitter v ce = 2 v 2.0 1.5 1.0 0.5 0.4 0.8 1.2 1.6 25 ? 55 tc = 100c *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. 0.01 0.5 5 i c max (continuous) i c max (pulsed)* v ceo max 1 ms* 10 ms* dc operation tc = 25c 30 100 5 10 1 3 1 0.03 0.05 0.1 0.3 0.5 3 50 100 ms*
2SC3076 2002-07-23 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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